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Insulating-layer formation of metallic LaNiO_3 on Nb-doped SrTiO_3 substrate

机译：Nb掺杂SrTiO_3衬底上金属LaNiO_3的绝缘层形成

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摘要

We investigated the electronic structures of strongly correlated metallic LaNiO_3 (LNO) and semiconducting Nb-doped SrTiO_3 (Nb:STO) heterostructures by varying the LNO film thickness using in situ photoemission spectroscopy. We found that, contrary to other interfaces with SrTiO_3 and LaAlO_3, insulating LNO layers are formed between metallic LNO layers and Nb:STO. Such behavior seems to be related with an electron transfer from Nb:STO to LNO due to Schottky-barrier formation at the interface.
机译：我们通过使用原位光发射光谱法改变LNO膜的厚度，研究了强相关的金属LaNiO_3（LNO）和半导体掺杂Nb的SrTiO_3（Nb：STO）异质结构的电子结构。我们发现，与SrTiO_3和LaAlO_3的其他界面相反，在金属LNO层和Nb：STO之间形成了绝缘LNO层。由于界面处的肖特基势垒形成，这种行为似乎与Nb：STO到LNO的电子转移有关。

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  • 来源
    《Applied Physics Letters》 |2015年第12期|121601.1-121601.4|共4页
  • 作者

    Hyang Keun Yoo; Young Jun Chang; Luca Moreschini; Hyeong-Do Kim; Chang Hee Sohn; Soobin Sinn; Ji Seop Oh; Cheng-Tai Kuo; Aaron Bostwick; Eli Rotenberg; Tae Won Noh;

  • 作者单位

    Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 151-747, South Korea,Department of Physics and Astronomy, Seoul National University, Seoul 151-747, South Korea;

    Department of Physics, University of Seoul, Seoul 130-743, South Korea,Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;

    Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;

    Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 151-747, South Korea,Department of Physics and Astronomy, Seoul National University, Seoul 151-747, South Korea;

    Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 151-747, South Korea,Department of Physics and Astronomy, Seoul National University, Seoul 151-747, South Korea;

    Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 151-747, South Korea,Department of Physics and Astronomy, Seoul National University, Seoul 151-747, South Korea;

    Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 151-747, South Korea,Department of Physics and Astronomy, Seoul National University, Seoul 151-747, South Korea;

    Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 151-747, South Korea,Department of Physics and Astronomy, Seoul National University, Seoul 151-747, South Korea;

    Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;

    Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;

    Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 151-747, South Korea,Department of Physics and Astronomy, Seoul National University, Seoul 151-747, South Korea;

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  • 入库时间 2022-08-18 03:15:05

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