机译:碳共掺杂抑制直拉硅中的硼氧缺陷
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;
机译:氮掺杂直拉生长硅衬底上外延层的晶体缺陷(Ⅱ)“通过控制晶体生长条件和碳共掺杂抑制外延层中的晶体缺陷”
机译:出版者注:“通过掺杂锗来抑制p型切克劳斯基硅中的硼氧缺陷” [Appl。物理来吧97,051903(2010)]
机译:掺锗抑制p型直拉硅中的硼氧缺陷
机译:氢在克恰克拉尔斯基硅中的硼氧缺陷永久钝化中的作用
机译:大量寿命限制Czochralski硅和石墨烯氧化物的缺陷作为表面钝化材料
机译:通过自组装分子实现无缺陷掺杂单层:间隙中碳相关缺陷的演变。磷掺杂硅
机译:p型直拉硅中硼氧缺陷的表征和钝化
机译:高压 - 高温处理对中子辐照诱导的切克劳斯硅缺陷的影响。