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机译:GeSn异质结构pin二极管在间接过渡到直接过渡时的电致发光
Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA;
Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604, USA;
Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604, USA;
LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704, USA;
Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA;
Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604, USA;
机译:Si上的GeSn发光pin二极管的室温电致发光
机译:Ge二极管的直接和间接带隙室温电致发光
机译:Si / Ge_(1-y)Sn_y p-i-n异质结构二极管的直接间隙电致发光
机译:Si整体生长在SiGeSn / GeSn双异质结构上的直接带隙电致发光
机译:用于光子和声子应用的InGaN异质结构和GeSn纳米晶体的光学研究:发光二极管和声子腔。
机译:ZnO纳米管/ GaN异质结构发光二极管的白色电致发光
机译:来自Gesn异质结构pin二极管的电致发光在间接到直接转变