Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation

摘要

We report on violet-emitting Ⅲ-nitride light-emitting diodes (LEDs) grown on bulk GaN substrates employing a flip-chip architecture. Device performance is optimized for operation at high current density and high temperature, by specific design consideration for the epitaxial layers, extraction efficiency, and electrical injection. The power conversion efficiency reaches a peak value of 84% at 85 ℃ and remains high at high current density, owing to low current-induced droop and low series resistance.