机译:TaZrO_x介电膜中嵌入的Ge纳米晶体的电荷陷阱
Institute of Applied Physics, TU Bergakademie Freiberg, D-09596 Freiberg, Germany;
Institute of Applied Physics, TU Bergakademie Freiberg, D-09596 Freiberg, Germany;
Institute of Applied Physics, TU Bergakademie Freiberg, D-09596 Freiberg, Germany;
Institute of Applied Physics, TU Bergakademie Freiberg, D-09596 Freiberg, Germany;
Institute of Materials Science, TU Bergakademie Freiberg, D-09596 Freiberg, Germany;
Institute of Materials Science, TU Bergakademie Freiberg, D-09596 Freiberg, Germany;
Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, D-01314 Dresden, Germany;
Institute of Applied Physics, TU Bergakademie Freiberg, D-09596 Freiberg, Germany;
机译:嵌入氧化硅膜的纳米粒子中的电荷陷阱和去陷阱
机译:锗离子注入和中子辐照法制备无定形SiO_2薄膜中嵌入的均匀Ge纳米晶体
机译:具有嵌入式电介质纳米粒子的薄硅膜中的光捕获的设计原理
机译:用于电荷俘获非易失性存储器的低介电常数碳氮化硅(SiCN)介电膜的特性
机译:电荷陷阱表征方法,用于评估ha基栅介电膜系统。
机译:氧化石墨烯作为介电和电荷陷阱元素并五苯的有机薄膜晶体管在非易失性存储器中的应用
机译:偏压辐照对HfO2介电薄膜中电荷陷阱的影响
机译:低kappa倍半硅氧烷基金属间介电薄膜中的辐射诱导电荷俘获