Photovoltaic conversion of visible spectrum by GaP capped InP quantum dots grown on Si (100) by metalorganic chemical vapor deposition

摘要

Growth of GaP capped strained InP quantum dots was carried out by metal organic chemical vapor deposition technique on Si (100) substrates to explore an alternative material system for photovoltaic conversion. Studies on reflectance spectroscopy show higher absorption of visible photons compared to scattering. Smooth and defect free interface provides low dark current with high rectification ratio. A solar cell made of five periods of quantum dots is found to provide a conversion efficiency of 4.18% with an open circuit voltage and short circuit current density of 0.52 V and 13.64mA/cm~2, respectively, under AM 1.5 solar radiation.