Electrical characteristics of MoSe_2 TFTs dependent on the Al_2O_3 capping layer

摘要

Back-gated MoSe_2 thin-film transistors (TFTs) with an Al_2O_3-capping layer were fabricated, and the device characteristics of the MoSe_2 TFTs that are dependent on the Al_2O_3-capping-layer passivation were investigated. The output drain current was doubled, the fluctuation of the output current was suppressed, and the threshold voltage of the MoSe_2 TFTs was negatively shifted with the Al_2O_3-capping layer. The on/off-current ratio of the MoSe_2 TFTs is approximately six decades regardless of the Al_2O_3-capping layer, but the field-effect mobility was greatly increased from 2.86 cm~2/Vs to 10.26 cm~2/Vs after the deposition of the Al_2O_3-capping layer. According to the results of this study, the Al_2O_3-capping layer can enhance the device characteristics of MoSe_2 TFTs.