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Field-angle and DC-bias dependence of spin-torque diode in giant magnetoresistive microstripe

机译:巨磁阻微条带中自旋转矩二极管的场角和直流偏置依赖性

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摘要

The spin torque diode effect in all metal spintronic devices has been proposed as a microwave detector with a high power limit and resistivity to breakdown. The previous works have revealed the field-angle dependence of the rectified DC voltage (V_(DC)) in the ferromagnetic stripe. The giant magnetoresistive (GMR) microstripe exhibits higher sensitivity compared with the ferromagnetic stripe. However, the influence of the magnetic field direction and bias current in the spin rectification of GMR microstripe is not yet reported. In this work, the angular dependence and bias dependence of resonant frequency (f_R) and V_(DC) a*6 investigated. A macrospin model concerning the contribution of magnetic field, shape anisotropy, and unidirectional anisotropy is engaged to interpret the experimental data.f_R exhibits a |sin δ_H|dependence on the in-plane field angle (δ_H). V_(DC) presents either |sin δ_H| or |sin2 δ_H cos δ_H | relation, depending on the magnitude of H_(ext). Optimized V_(DC) of 24 μV is achieved under 4mT magnetic field applied at δ_H=170°. Under out-of-plane magnetic field, f_R shows a cos 2θ_H reliance on the polar angle (θ_H), whereas V_(DC) is sin θ_H dependent. The Oersted field of the DC bias current (I_(DC)) modifies the effective field, resulting in shifted f_R. Enhanced V_(DC) with increasing I_(DC) is attributed to the elevated contribution of spin-transfer torque. Maximum V_(DC) of 35.2 μV is achieved, corresponding to 47% increase compared with the optimized value under zero bias. Higher I_(DC) also results in enlarged damping parameter in the free layer, resulting in increased linewidth in the spin torque diode spectra. This work experimentally and analytically reveals the angular dependence of f_R and V_(DC) in the GMR microstripe. The results further demonstrate a highly tunable f_R and optimized V_(DC) by bias current without the external magnetic field. GMR microstripe holds promise for application as a high-power, frequency-tunable microwave detector that works under small or zero magnetic field.
机译:已经提出了在所有金属自旋电子器件中的自旋扭矩二极管效应作为具有高功率极限和耐击穿性的微波检测器。先前的工作揭示了铁磁条中整流直流电压(V_(DC))的场角依赖性。与铁磁条相比,巨磁阻(GMR)微条具有更高的灵敏度。但是,尚未报道磁场方向和偏置电流对GMR微条带自旋整流的影响。在这项工作中,研究了谐振频率(f_R)和V_(DC)a * 6的角度依赖性和偏置依赖性。引入了涉及磁场,形状各向异性和单向各向异性的宏观自旋模型来解释实验数据。f_R表现出| sinδ_H|依赖于平面内场角(δ_H)。 V_(DC)表示| sinδ_H|或| sin2δ_Hcosδ_H|取决于H_(ext)的大小。在δ_H= 170°施加4mT磁场下,可实现24μV的最佳V_(DC)。在平面外磁场下,f_R显示出cos2θ_H依赖于极角(θ_H),而V_(DC)取决于sinθ_H。直流偏置电流(I_(DC))的Oersted磁场会修改有效磁场,从而导致f_R发生偏移。随着I_(DC)的增加,增强的V_(DC)归因于自旋转移扭矩的增加贡献。达到35.2μV的最大V_(DC),与零偏压下的最佳值相比,增加了47%。较高的I_(DC)还会导致自由层中的阻尼参数增大,从而导致自旋扭矩二极管频谱的线宽增加。这项工作通过实验和分析揭示了GMR微带中f_R和V_(DC)的角度依赖性。结果进一步证明了在没有外部磁场的情况下,通过偏置电流可实现高度可调的f_R和优化的V_(DC)。 GMR微条带有望用作在小磁场或零磁场下工作的大功率,频率可调微波探测器。

著录项

  • 来源
    《Applied Physics Letters》 |2016年第19期|192402.1-192402.5|共5页
  • 作者单位

    Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, Hong Kong;

    School of Science and Engineering, Chinese University of Hong Kong (Shenzhen), Shenzhen 518172, China;

    Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, Hong Kong;

    Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, Hong Kong;

    Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, Hong Kong;

    Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, Hong Kong;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 03:14:55

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