机译:等离子体辅助分子束外延生长具有单晶铝势垒的GaN肖特基二极管
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan;
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan;
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan;
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan;
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan;
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan;
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan;
Division of Scientific Research, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan;
机译:等离子体辅助分子束外延生长的单晶N极GaN p-n二极管
机译:Ni对β-(AlxGa(1-x))O-2(3)的肖特基势垒高度,等离子体辅助分子束外延生长具有不同的成分
机译:等离子体辅助分子束外延在独立GaN基材上生长的共振隧道二极管的比较
机译:由等离子辅助分子束外延生长的GaN层的表面形态,MOCVD-生长的GaN模板
机译:等离子体辅助分子束外延的Inn / GaN多量子孔的生长和行为
机译:等离子体辅助分子束外延生长的Zn极性BeMgZnO / ZnO异质结构上肖特基二极管的制备
机译:等离子体辅助分子束的单晶N极性GaN p-n二极管 外延