机译:单层硼苯电极可有效消除肖特基势垒和强电场效应
Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics and Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;
Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics and Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;
Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics and Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;
机译:通过锂离子吸附在隧道光电二极管中消除硼烯/ C4N4 VDW异质条件中的层间肖特基屏障
机译:使用掺杂剂隔离的绝缘体上硅基肖特基势垒金属氧化物半导体场效应晶体管有效降低肖特基势垒
机译:强磁场对Pb-p-Hg_(1-x)Cd_x Te肖特基势垒中的越过势垒传输的影响
机译:通过外部电场调整硼酮/ MOS_2 van der Wavs异质结构的肖特基障碍
机译:通过原子力显微镜并通过共面电极-电介质平台的纳米制造对有机单层的结构和电学特性进行表征
机译:石墨烯/ ALN界面中肖特基势垒高度的外部电场引起的可调性:第一原理研究
机译:使用掺杂剂隔离的绝缘体上硅基肖特基势垒金属氧化物半导体场效应晶体管有效降低肖特基势垒