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首页> 外文期刊>Applied Physics Letters >Impact of built-in potential across LaFeO_3/SrTiO_3 heterojunctions on photocatalytic activity
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Impact of built-in potential across LaFeO_3/SrTiO_3 heterojunctions on photocatalytic activity

机译：LaFeO_3 / SrTiO_3异质结上的内建电势对光催化活性的影响

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摘要

Polar-nonpolar interfaces between insulating LaFeO_3 (LFO) and semiconducting SrTiO_3 (STO) were investigated to elucidate effects of built-in potential on photocarrier dynamics during water oxidation reactions. The LFO films were grown on the TiO_2- and SrO-terminated (001) Nb-doped STO substrates by using pulsed-laser deposition. The photocurrent-voltage curves varied depending on the interface termination. Potential profiles across the interface were established from these curves as well as capacitance-voltage curves. The presence of a depletion (accumulation) region near the SrO- (TiO_2-) terminated interface facilitates (suppresses) the extraction of photocarriers generated in STO. On the other hand, the difference in the built-in potential in LFO barely reflects the magnitude of the photocurrent.
机译：研究了绝缘LaFeO_3（LFO）和半导体SrTiO_3（STO）之间的极性-非极性界面，以阐明内在电势对水氧化反应过程中光载流子动力学的影响。通过使用脉冲激光沉积，在TiO_2和SrO端接的（001）掺Nb的STO衬底上生长LFO膜。光电流-电压曲线根据接口终端而变化。从这些曲线以及电容-电压曲线可以确定界面上的电位分布。 SrO-（TiO_2-）终止的界面附近存在耗尽（累积）区域，有助于（抑制）STO中生成的光载流子的提取。另一方面，LFO中内置电位的差异几乎不能反映光电流的大小。

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  • 来源
    《Applied Physics Letters 》 |2016年第21期| 211605.1-211605.5| 共5页
  • 作者

    Kentarou Nakamura; Hisanori Mashiko; Kohei Yoshimatsu; Akira Ohtomo;

  • 作者单位

    Department of Applied Chemistry, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan,Department of Chemical Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan;

    Department of Applied Chemistry, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan,Department of Chemical Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan;

    Department of Applied Chemistry, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan,Department of Chemical Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan;

    Department of Applied Chemistry, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan,Materials Research Center for Element Strategy (MCES), Tokyo Institute of Technology, Yokohama 226-8503, Japan,Department of Chemical Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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