机译:间隙氢共掺杂高迁移率La:BaSnO_3薄膜的固相外延生长
Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom,Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan;
Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom;
Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom;
Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan;
Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom;
Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan,Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan;
Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan,Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan;
Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan,Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan;
机译:反应性固相外延生长同源化合物RAO_3(MO)_m的异质外延薄膜的结构:适用于多种材料和外延模板层
机译:衬底对共掺杂La_(0.5)Sr_(0.5)TiO_(3-δ)外延薄膜生长的影响
机译:由Si(111)表面上固相外延生长制备的Ge薄膜成果膜的结构变化
机译:快速热退火和氢化对固相结晶多Si薄膜掺杂浓度和载流子迁移的影响
机译:硅基薄膜中固相外延生长的流固相互作用分析。
机译:固态衬底上高度稳定的整体式UiO-66-NH2 MOF薄膜的液相准外延生长
机译:固态外延生长高迁移率La:BasnO3薄膜与间隙氢共掺杂
机译:硅合金固相外延生长过程中间隙捕获的增强扩散。草案