Resistive memory effects in BiFeO_3 single crystals controlled by transverse electric fields

摘要

The effects of electric fields perpendicular to the c-axis of the trigonal cell in single crystals of BiFeO_3 are investigated through magnetization and resistance measurements. Magnetization and resistance exhibit hysteretic changes under applied electric fields, which can be ascribed to the reorientation of the magnetoelectric domains. Samples are repetitively switched between high- and low-resistance states by changing the polarity of the applied electric fields over 20000 cycles at room temperature. These results demonstrate the potential of BiFeO_3 for use in non-volatile memory devices.