Temperature dependence of mid-infrared intersubband absorption in AIGaN/GaN multiple quantum wells

摘要

The temperature dependence of the mid-infrared intersubband (ISB) absorption in non-polar (m-plane) and polar (c-plane) AIGaN/GaN quantum wells (QWs) is studied. The ISB absorption shifts to higher energy as the temperature is reduced from 300 K to below 10K. Both m-plane and c-plane QWs show a small energy shift (1.6-2.6meV) compared to AlGaAs/GaAs (3.5-5.2meV) and AlSb/InAs (6.2 and 12meV) QWs. Theoretical calculations considering the temperature induced material constant changes show good agreement with the experimental results. These results suggest that ISB transition energies in AIGaN/GaN QWs are more stable against temperature change mainly because of the heavy effective masses and small nonparabolicities.