Nearly lattice-matched short-wave infrared InGaAsBi detectors on InP

摘要

This work reports on the demonstration of a short-wave infrared detector nearly lattice matched to InP substrate using quaternary InGaAsBi as the absorption layer. The bismuth content of about 3.2% has red-shifted the 50% cut-off wavelength from about 1.6 μm to 2.1 μm at room temperature, indicating a bandgap reduction of about 180meV due to bismuth incorporation. The detector shows an encouraging dark current density of 2.4 × 10~(-4) A/cm~2 at bias voltage of -10 mV at 300 K. This work shows the promising potential of InP-based lattice-matched InGaAsBi detectors for shortwave infrared detection.