机译:基于差分载流子寿命分析的InGaN / GaN发光二极管效率下降
Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;
Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;
Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;
Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;
Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;
Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;
Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;
Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;
Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China;
机译:InGaN发光二极管的下垂:差分载流子寿命分析
机译:InGaN发光二极管的下垂:差分载流子寿命分析
机译:InGaN发光二极管的下垂:差分载流子寿命分析
机译:通过选择性载流子分配操纵,提高InGaN / GaN发光二极管的效率和下垂率
机译:研究和优化GaN基发光二极管中的载流子传输,载流子分布和效率下降
机译:有效抑制GaN基发光二极管的效率下降:显着降低载流子密度和内置场的作用
机译:Ingan / GaN发光二极管效率下垂的三维数值研究