机译:m面GaN气相外延过程中的岛动力学和各向异性
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA,University of Fribourg, Department of Physics and Fribourg Center for Nanomaterials, Chemin du Musee 3, CH-1700 Fribourg, Switzerland;
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA;
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA;
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA;
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA;
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA;
Munkholm Consulting, Mountain View, California 94043, USA;
Department of Physics, Northern Illinois University, DeKalb, Illinois 60115, USA;
机译:在氢化物气相外延中通过HCl化学反应蚀刻,从m面蓝宝石衬底上实现2 in。独立式m面GaN晶片与m面蓝宝石衬底的新型原位自分离
机译:通过卤化物气相外延生长用于m平面InGaN外延生长的最新m平面自立式GaN衬底的优点和剩余问题
机译:通过氢化物气相外延在M平面蓝宝石上生长的M平面Gan
机译:金属 - 有机气相外延,气源分子束外延和卤化物气相外延生长GaN的对比光学特征
机译:氢化物气相外延法研究氮化镓的m-平面同质外延和平衡晶体形状。
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机译:m面GaN气相外延过程中的岛动力学和各向异性