Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AIGaN/GaN high electron mobility transistor structures

摘要

We report a comparison of two different approaches to detecting cardiac troponin I (cTnI) using antibody-functionalized AIGaN/GaN High Electron Mobility Transistors (HEMTs). If the solution containing the biomarker has high ionic strength, there can be difficulty in detection due to charge-screening effects. To overcome this, in the first approach, we used a recently developed method involving pulsed biases applied between a separate functionalized electrode and the gate of the HEMT. The resulting electrical double layer produces charge changes which are correlated with the concentration of the cTnI biomarker. The second approach fabricates the sensing area on a glass slide, and the pulsed gate signal is externally connected to the nitride HEMT. This produces a larger integrated change in charge and can be used over a broader range of concentrations without suffering from charge-screening effects. Both approaches can detect cTnI at levels down to 0.01 ng/mI. The glass slide approach is attractive for inexpensive cartridge-type sensors.