首页> 外文期刊>Applied Physics Letters >Tuning the magnetoresistance symmetry of Pt on magnetic insulators with temperature and magnetic doping
【24h】

Tuning the magnetoresistance symmetry of Pt on magnetic insulators with temperature and magnetic doping

机译:通过温度和磁掺杂调整Pt在绝缘子上的磁阻对称性

获取原文
获取原文并翻译 | 示例
       

摘要

We present a comparison study of the temperature dependence of the intriguing magnetoresistance (MR) in Pt/YIG (yttrium iron garnet), Pt/YIG_(BB) (the YIG substrate has been bombarded with Ar~+), and Pt/SiO_2 (with different Fe doping levels). With decreasing temperature, the MRs in Pt/YIG and Pt/YIGBB change symmetry from R_Z=R_X> R_y at room temperature to R_x>R_z>R_y at low temperature. A similar behavior in both Pt/YIG and Pt/YIG_(BB) implies that the underlying physics is due to magnetic scattering, instead of the pure spin current across the interface. By changing the Fe doping level in the SiO_2 substrate, we can further systematically modulate the symmetry of MR in Pt/ SiO_2 (Fe doped). The doping level dependent symmetry can also qualitatively explain the controversy over the MRs of Pt/YIG and similar structures at low temperature.
机译:我们对Pt / YIG(钇铁石榴石),Pt / YIG_(BB)(YIG衬底已被Ar〜+轰击)和Pt / SiO_2(铁掺杂水平不同)。随着温度降低,Pt / YIG和Pt / YIGBB中的MRs从室温下的R_Z = R_X> R_y变为低温下的R_x> R_z> R_y。在Pt / YIG和Pt / YIG_(BB)中都有类似的行为,这表明潜在的物理现象是由于磁散射而不是界面上的纯自旋电流引起的。通过改变SiO_2衬底中的Fe掺杂水平,我们可以进一步系统地调制Pt / SiO_2(Fe掺杂)中MR的对称性。掺杂水平依赖的对称性也可以定性地解释关于Pt / YIG及其类似结构在低温下的MR的争论。

著录项

  • 来源
    《Applied Physics Letters》 |2017年第22期|222402.1-222402.5|共5页
  • 作者单位

    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 22 Hankou Road, Nanjing 210093, People's Republic of China;

    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 22 Hankou Road, Nanjing 210093, People's Republic of China,Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 22 Hankou Road, Nanjing 210093, People's Republic of China;

    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 22 Hankou Road, Nanjing 210093, People's Republic of China,Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 22 Hankou Road, Nanjing 210093, People's Republic of China;

    Department of Physics and Astronomy, Johns Hopkins University, Baltimore, Maryland 21218, USA;

    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 22 Hankou Road, Nanjing 210093, People's Republic of China,Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 22 Hankou Road, Nanjing 210093, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 03:14:06

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号