机译:通过插入Al_2O_3薄层来增强氮化物基CBRAM器件的电阻开关性能
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan;
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan;
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan;
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan;
机译:通过插入超薄化学活性金属纳米层来调节基于二元氧化物的电阻式存储器件的开关行为:以Ta2O5-Ta系统为例
机译:通过基于HfO_2的RRAM器件中的Al_2O_3层包含改善了电阻切换特性
机译:通过在基于WOX的电阻开关存储器中插入薄TiO2层来提高短期可塑性
机译:插入基于HfO_2的RRAM设备中的Al_2O_3层的稳定电阻开关特性
机译:氧化锌基电阻开关器件。
机译:TiOx活性层的多层堆叠顺序对忆阻器电阻开关特性的影响
机译:出版商注:“钽氮化物电阻随机存取存储器设备的”双极电阻切换特性“Appl。物理。吧。 106,203101(2015)
机译:均匀层状倾斜表面稳定铁电液晶器件的电光开关特性