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Concentration dependent carriers dynamics iri CsPbBr_3 perovskite nanocrystals film with transient grating

机译:浓度依赖性载流子动力学具瞬态光栅的iri CsPbBr_3钙钛矿纳米晶体薄膜

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摘要

The concentration dependence of the carrier dynamics is a key parameter to describe the photo-physical properties of semiconductor films. Here, we investigate the carrier dynamics in the CsPbBr_3 perovskite nanocrystal film by employing the transient grating (TG) technique with continuous bias light. The concentration of initial carriers is determined by the average number of photons per nanocrystals induced by pump light (). The multi-body interaction would appear and accelerate the TG dynamics with. When is more than 3.0, the TG dynamics slightly changes, which implies that the Auger recombination would be the highest order multi-body interaction in carrier recombination dynamics. The concentration of non-equilibrium carriers in the film is controlled by the average number of photons per nanocrystals excited by continuous bias light ()• Increasing would improve the trapping-detrapping process by filling the trapping state, which would accelerate the carrier diffusion and add the complexity of the mono-molecular recombination mechanism. The results should be useful to further understand the mechanism of carrier dynamics in the CsPbBr_3 perovskite nanocrystal film and of great importance for the operation of the corresponding optoelectronic devices,
机译:载流子动力学的浓度依赖性是描述半导体膜光物理性质的关键参数。在这里,我们研究瞬态光栅(TG)技术与连续偏置光在CsPbBr_3钙钛矿纳米晶体膜中的载流子动力学。初始载流子的浓度由泵浦光(N)诱导的每个纳米晶体的平均光子数确定。出现多体相互作用并使用加速TG动力学。当大于3.0时,TG动力学会略有变化,这意味着俄歇重组将是载体重组动力学中最高阶的多体相互作用。薄膜中非平衡载流子的浓度由连续偏置光()激发的每个纳米晶体的平均光子数控制。增加将通过填充来改善捕集-捕集过程捕获状态,将加速载流子扩散并增加单分子重组机制的复杂性。这些结果对于进一步了解CsPbBr_3钙钛矿纳米晶体薄膜中载流子动力学的机制应该是有用的,并且对于相应的光电器件的操作非常重要,

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  • 来源
    《Applied Physics Letters》 |2017年第18期|181910.1-181910.5|共5页
  • 作者单位

    Femtosecond Laboratory, Key Laboratoiy of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, People's Republic of China , Department of Chemistry, University of California, Irvine, California 92697-2025, USA;

    Femtosecond Laboratory, Key Laboratoiy of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, People's Republic of China;

    Department of Chemistry, University of California, Irvine, California 92697-2025, USA;

    Femtosecond Laboratory, Key Laboratoiy of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, People's Republic of China;

    Femtosecond Laboratory, Key Laboratoiy of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, People's Republic of China , Department of Chemical Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA;

    Femtosecond Laboratory, Key Laboratoiy of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, People's Republic of China;

    Femtosecond Laboratory, Key Laboratoiy of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, People's Republic of China;

    Femtosecond Laboratory, Key Laboratoiy of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, People's Republic of China;

    State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China;

    Femtosecond Laboratory, Key Laboratoiy of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, People's Republic of China;

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