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Ultra-low coercive field of improper ferroelectric Ca_3Ti_2O_7 epitaxial thin films

机译:铁电体Ca_3Ti_2O_7外延薄膜的超低矫顽场

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摘要

Hybrid improper ferroelectrics have their electric polarization generated by two or more combined non-ferroelectric structural distortions, such as the rotation and tilting of Ti-O octahedral in the Ca_3Ti_2O_7 (CTO) family. In this work, we prepare the high quality (010)-oriented CTO thin films on (110) SrTiO_3 (STO) substrates by pulsed laser deposition. The good epitaxial growth of the CTO thin films on the substrates with the interfacial epitaxial relationship of [001]CTO//[001]STO and [100]CTO//[-110]STO is revealed. The in-plane ferroelectric hysteresis unveils an ultralow coercive field of ~5 kV/cm even at low temperature, nearly two orders of magnitude lower than that of bulk CTO single crystals. The huge difference between the epitaxial thin films and bulk crystals is most likely due to the lattice imperfections in the thin films rather than substrate induced lattice strains, suggesting high sensitivity of the ferroelectric properties to lattice defects.
机译:混合不正确的铁电体的电极化是由两个或多个组合的非铁电结构畸变产生的,例如Ca_3Ti_2O_7(CTO)族中Ti-O八面体的旋转和倾斜。在这项工作中,我们通过脉冲激光沉积在(110)SrTiO_3(STO)基板上制备高质量(010)取向的CTO薄膜。揭示了具有[001] CTO // [001] STO和[100] CTO // [-110] STO的界面外延关系的CTO薄膜在衬底上的良好外延生长。即使在低温下,面内铁电磁滞也可显示〜5 kV / cm的超低矫顽场,比块状CTO单晶低近两个数量级。外延薄膜和块状晶体之间的巨大差异很可能是由于薄膜中的晶格缺陷而不是衬底引起的晶格应变,这表明铁电特性对晶格缺陷具有很高的敏感性。

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  • 来源
    《Applied Physics Letters》 |2017年第4期|042901.1-042901.5|共5页
  • 作者单位

    Laboratory of Solid State Microstructures and Innovative Center of Advanced Microstructures,Nanjing University, Nanjing 210093, China;

    Institute for Advanced Materials, South China Normal University, Guangzhou 510006, China;

    Laboratory of Solid State Microstructures and Innovative Center of Advanced Microstructures,Nanjing University, Nanjing 210093, China;

    Laboratory of Solid State Microstructures and Innovative Center of Advanced Microstructures,Nanjing University, Nanjing 210093, China;

    Institute for Advanced Materials, South China Normal University, Guangzhou 510006, China;

    Laboratory of Solid State Microstructures and Innovative Center of Advanced Microstructures,Nanjing University, Nanjing 210093, China;

    School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China;

    Laboratory of Solid State Microstructures and Innovative Center of Advanced Microstructures,Nanjing University, Nanjing 210093, China;

    Laboratory of Solid State Microstructures and Innovative Center of Advanced Microstructures,Nanjing University, Nanjing 210093, China;

    Department of Applied Physics, Hong Kong Polytechnic University, Hong Kong, China;

    Department of Applied Physics, Hong Kong Polytechnic University, Hong Kong, China;

    Laboratory of Solid State Microstructures and Innovative Center of Advanced Microstructures,Nanjing University, Nanjing 210093, China,Institute for Advanced Materials, South China Normal University, Guangzhou 510006, China;

    Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University,Piscataway, New Jersey 08854, USA;

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