机译:InGaN / GaN基发光二极管的p型耗尽掺杂研究
Luminous! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798,Singapore;
Luminous! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798,Singapore,Key Laboratory of Electronic Materials and Devices of'Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin 300401,People's Republic of China;
Luminous! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798,Singapore;
Luminous! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798,Singapore;
Luminous! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798,Singapore;
Luminous! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798,Singapore;
Luminous! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798,Singapore;
Department of Electrical and Electronic Engineering, College of Engineering, Southern University of Science and Technology, No 1088, Xueyuan Rd, Nanshan District, Shenzhen, Guangdong 518055,People's Republic of China;
Luminous! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798,Singapore,School of Physics and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link,Singapore 637371, Singapore,Department of Electrical and Electronics, Department of Physics, and UNAM-National NanotechnologyResearch Center and Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800,Turkey;
机译:基于InGaN的绿色发光二极管的系统和数值研究:Si掺杂量子屏障,工程化P封闭层和Aigan / GaN结构p型区域
机译:MG掺杂在Ingan / GaN的发光二极管电气性能屏障的影响
机译:Ni / Ga掺杂的ZnO层作为基于GaN的发光二极管的透明p型欧姆接触
机译:Ag膜上的石墨烯,用于与GaN基发光二极管中的p型GaN形成反射导电层欧姆接触
机译:研究和优化GaN基发光二极管中的载流子传输,载流子分布和效率下降
机译:梯度铟成分p型InGaN层增强GaN基绿色发光二极管的量子效率
机译:in Ingan / GaN的发光二极管P型耗竭掺杂的研究