机译:导致电荷载流子去除的缺陷以及与受辐射β-Ga_2O_3的深能级引入相关的缺陷
Natl Univ Sci & Technol, MISiS, 4 Leninsky Ave, Moscow 194017, Russia;
Natl Univ Sci & Technol, MISiS, 4 Leninsky Ave, Moscow 194017, Russia;
Natl Univ Sci & Technol, MISiS, 4 Leninsky Ave, Moscow 194017, Russia;
Natl Univ Sci & Technol, MISiS, 4 Leninsky Ave, Moscow 194017, Russia;
Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA;
Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA;
Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA;
Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA;
Korea Univ, Dept Chem & Biol Engn, 145,Anam Ro, Seoul, South Korea;
Natl Univ Sci & Technol, MISiS, 4 Leninsky Ave, Moscow 194017, Russia;
RAS, ITEP, 25 B Cheremushkinskaya St, Moscow 117218, Russia;
Natl Univ Sci & Technol, MISiS, 4 Leninsky Ave, Moscow 194017, Russia;
机译:辐照III-V半导体中深本征点缺陷能级的能量位置与有限费米能级之间的相关性
机译:通过光学和热刺激缺陷光谱检测到(010)β-Ga_2O_3的整个带隙的深层缺陷
机译:载体捕获由氮气植入损坏的β-GA_2O_3肖特基阻隔二极管的动力学,深层和隔离性能
机译:质子辐照的InGaP空间太阳能电池载流子去除效果和深层缺陷的研究
机译:高级III族氮化物半导体中的深度缺陷:质子辐照的存在,性质和影响
机译:与非携带者相比,携带因子V Leiden的携带者与其他携带者相比,深静脉血栓形成和肺栓塞的风险不同。一项大型回顾性家庭队列研究的结果
机译:低能电子辐照引起6H-siC的深层缺陷:深层E1 / E 2的微观结构意义