首页>
外国专利>
Bridge field effect transistor memory cell has charge storage layer designed for selective charge carrier introduction or removal by application of given electrical potential
Bridge field effect transistor memory cell has charge storage layer designed for selective charge carrier introduction or removal by application of given electrical potential
The charge storage layer is designed such that electrical charge carriers can be introduced into or removed from it, selectively, by applying a given electrical potential to the bridge field effect transistor memory cell. An independent claim is included for the method of manufacture.
展开▼