Radiation hardness of β-Ga_2O_3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

摘要

The effects of ionizing radiation on β-Ga_2O_3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as 1.6 MGy(SiO_2) was demonstrated for the bulk Ga_2O_3 channel by virtue of weak radiation effects on the MOSFETs' output current and threshold voltage. The MOSFETs remained functional with insignificant hysteresis in their transfer characteristics after exposure to the maximum cumulative dose. Despite the intrinsic radiation hardness of Ga_2O_3, radiation-induced gate leakage and drain current dispersion ascribed respectively to dielectric damage and interface charge trapping were found to limit the overall radiation hardness of these devices.