Memristor based on a layered FePS_3 2D material with dual modes of resistive switching

摘要

In this report, we present a vertical memristor based on a layered FePS(3)two-dimensional material with the structure Ag/FePS3/Au, where FePS(3)is a single-crystalline layer with a thickness of similar to 151 nm. By operating a device with a pulse voltage of 0.1 V dual modes of resistive switching with both analog and digital features are implemented in a single device. One mode lies between the OFF and ON states and another lies in the ON state. The device shows nonvolatility. Short-term plasticity and long-term potentiation are observed. Therefore, the FePS3 memristor is suitable for application in flexible and complex neuromorphic systems.