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Synthesis of Lotus-Leaf-Shaped and Four-Footed ZnO Nanostructure on a Large Scale

机译:荷叶形四足ZnO纳米结构的大规模合成

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摘要

Lotus-leaf-shaped and four (or five)-footed ZnO nanostructures have been successfully synthesized on Si(111) substrates by thermal evaporation with radio frequency (RF) magnetron sputtering. In this study, x-ray diffraction (XRD) analysis, scanning electron microscopy (SEM) and transmission electron microscopy (TEM), fourier transform infared spetrophotometry (FTIRS) and photoluminescence (PL) measurement were used to characterize the as-prepared samples. The results indicate that the formed samples have high-quality single-crystal hexagonal wurtzite ZnO nanostructures. Under 325 nm light emission at room temperature, the samples had a relatively weak near-UV emissive peak located at 386 nm and a broad and strong green luminous (GL) band located at 505 nm, which were attributed to ZnO near-band-edge excitation transition and deep-level or trap-state emission, respectively. In the end, the formation mechanism of the as-prepared samples was discussed.
机译:通过射频(RF)磁控溅射热蒸发,已成功在Si(111)衬底上合成了荷叶形和四(或五)英尺的ZnO纳米结构。在这项研究中,使用X射线衍射(XRD)分析,扫描电子显微镜(SEM)和透射电子显微镜(TEM),傅立叶变换红外分光光度法(FTIRS)和光致发光(PL)测量来表征制备的样品。结果表明,所形成的样品具有高质量的单晶六方纤锌矿型ZnO纳米结构。在室温下325 nm的光发射下,样品具有一个相对较弱的近UV发射峰(位于386 nm)和一个宽而强的绿色发光(GL)谱带(位于505 nm),这归因于ZnO近谱带边缘激发跃迁和深能级或陷阱态发射。最后,讨论了所制备样品的形成机理。

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  • 来源
    《Applied physics express》 |2009年第10期|091101.1-091101.3|共3页
  • 作者单位

    Institute of Semiconductor, College of Physics and Electronics, Shandong Normal University, Jinan 250014, P.R. China;

    Institute of Semiconductor, College of Physics and Electronics, Shandong Normal University, Jinan 250014, P.R. China;

    Institute of Semiconductor, College of Physics and Electronics, Shandong Normal University, Jinan 250014, P.R. China;

    Institute of Semiconductor, College of Physics and Electronics, Shandong Normal University, Jinan 250014, P.R. China;

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