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Transmission Electron Microscopy Observation on the Eariy Stages of Sn-Doped In_2O_3 Film Growth Deposited on Amorphous Carbon Films by DC Magnetron Sputtering

机译:直流磁控溅射沉积在非晶碳膜上的Sn掺杂In_2O_3薄膜生长早期的透射电镜观察

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摘要

Early stages of film growth for Sn-doped In_2O_3 (ITO) deposited on amorphous carbon (a-C) films by dc magnetron sputtering were investigated by transmission electron microscopy (TEM). ITO islands appeared as dark regions in the TEM images, and their density and size increased with increasing deposition time. Furthermore, electron diffraction analyses revealed that the intensity of the ring pattern for In_2O_3(222) gradually increased with increasing deposition time. This indicated that crystallized ITO islands were formed on the a-C surface in the early stages of the film growth.
机译:通过透射电子显微镜(TEM)研究了通过直流磁控溅射沉积在非晶碳(a-C)薄膜上的Sn掺杂In_2O_3(ITO)薄膜生长的早期阶段。 ITO岛在TEM图像中显示为暗区,并且其密度和尺寸随沉积时间的增加而增加。此外,电子衍射分析表明,In_2O_3(222)环形图案的强度随着沉积时间的增加而逐渐增加。这表明在膜生长的早期,在a-C表面上形成了结晶的ITO岛。

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  • 来源
    《Applied physics express》 |2009年第9期|095501.1-095501.3|共3页
  • 作者单位

    Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 229-8558, Japan;

    Center for Instrumental Analysis, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 229-8558, Japan;

    Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 229-8558, Japan;

    Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 229-8558, Japan;

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