Effect of Hydrogenation on the Dangling-Bond Free 4H-SiC(1120)/SiO_2 Interface Studied by Ab Initio Calculations

摘要

Ab initio calculation method is used to study the effect of hydrogenation at two different stages of the 4H-SiC(1120)/SiO_2 interface, which is initially constructed to have no dangling bond states. We find that the electronic density of states near the conduction band edge in this structure decreases by dissolving the Si-C bonds connecting the SiC and SiO_2 structures via hydrogenation.