High-Quality p-Type ZnO Films Grown by Co-Doping of N and Te on Zn-Face ZnO Substrates

摘要

This article will report the epitaxial growth of high-quality p-type ZnO layers on Zn-face ZnO substrates by nitrogen and tellurium (N+Te) co-doping. ZnO:[N+Te] films show p-type conductivity with a hole concentration of 4 × 10~(16) cm~(-3), while ZnO:N shows n-type conduction. The photoluminescence of ZnO:N shows broad bound exciton emission lines. Meanwhile, ZnO:[N+Te] layers show dominant A~0X emission line at 3.359 eV, with a linewidth as narrow as 1.2 meV. Its X-ray linewidth shows narrower line width of 30 arcsec. Detailed investigation of photoluminescence properties of (N+Te) codoped ZnO layers suggest that the binding energy of N acceptors lies in a range of 121-157 meV.