机译:使用优化的缓冲层的高效氢化纳米晶立方碳化硅/晶体硅异质结太阳能电池
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;
Institute of Physical Electronics, University of Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany;
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan,Photovoltaics Research Center (PVREC), Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;
机译:高效P型氢化微晶硅/ n型晶体硅异质结太阳能电池非晶硅缓冲层的优化
机译:VHF-PECVD法制备n型晶体硅太阳能电池异质结发射极掺杂铝的氢化纳米晶立方碳化硅
机译:高效结晶硅异质结太阳能电池p型氢化微晶氧化硅窗口层的优化
机译:VHF-PECVD制备P型氢化纳米晶立方碳碳化物/ N型晶体硅杂旋转太阳能电池
机译:高效硅太阳能电池的宽带隙异质结窗口层和光学限制
机译:感应耦合等离子体沉积在室内照明中实现高转化效率的低温生长氢化非晶碳化硅太阳能电池
机译:用VHF-PECVD制备p型氢化纳米晶碳化硅/ n型晶硅异质结太阳能电池。