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首页> 外文期刊>_Applied Physics Express >Enhanced Emission Efficiency of GaN-Based Flip-Chip Light-Emitting Diodes by Surface Plasmons in Silver Disks
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Enhanced Emission Efficiency of GaN-Based Flip-Chip Light-Emitting Diodes by Surface Plasmons in Silver Disks

机译:银圆盘中的表面等离激元提高了GaN基倒装芯片发光二极管的发射效率

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摘要

We demonstrate the surface plasmon (SP)-enhanced flip-chip blue light-emitting diodes (LEDs) having silver (Ag) disks in the p-GaN layer. The optical output power of an SP-enhanced flip-chip LED with Ag disks is increased by 45% at 20 mA without showing any degradation of electrical characteristics, compared with that of a conventional flip-chip LED. The increase in optical output power is attributed to the improved internal quantum efficiency of LEDs because of the increase in the spontaneous emission rate by the resonance coupling between the excitons in multiple quantum wells and the SPs in the Ag disks.
机译:我们演示了在p-GaN层中具有银(Ag)盘的表面等离激元(SP)增强的倒装芯片蓝色发光二极管(LED)。与传统的倒装芯片LED相比,带有Ag盘的SP增强型倒装芯片LED的光输出功率在20 mA下增加了45%,而不会显示出电气特性的任何下降。光输出功率的增加归因于LED内部量子效率的提高,这是由于多个量子阱中的激子与Ag盘中的SP之间的共振耦合导致的自发发射速率的提高。

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  • 来源
    《_Applied Physics Express》 |2012年第12期|122103.1-122103.3|共3页
  • 作者单位

    School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea;

    Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea;

    School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea;

    School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea;

    School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea;

    Advanced Photonics Research Institute, Gwangju Insititute of Science and Technology, Gwangju 500-712, Republic of Korea;

    School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea,Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea;

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