Performance Improvement in Poly(3-hexylthiophene):[6,6]-Phenyl C_(61) Butyric Acid Methyl Ester Polymer Solar Cell by Doping Wide-Gap Material Tris(phenylpyrazole)iridium

摘要

This letter demonstrates the high external quantum efficiency (EOE) of poly(3-hexylthiophene) (P3HT)-based polymer solar cells and their enhanced hole transport ability through doping a wide-band-gap material tris(phenylpyrazole)iridium [Ir(ppz)_3]. Doping Ir(ppz)_3 can enhance low wavelength optical absorption capacity and doping a small amount of Ir(ppz)_3 can also improve the crystallinity of P3HT. Moreover, the large energy barrier between Ir(ppz)_3 and the polymer active layer, which can reduce the electron current densities and increase the hole current densities, indicates a more balanced carrier transport based on hole- and electron-only devices. Such characteristics contribute to efforts to improve the photocurrent density of polymer solar cells.