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机译:Si(111)基板错切角度对InGaN LED性能的影响
National Engineering Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, P. R. China;
National Engineering Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, P. R. China;
National Engineering Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, P. R. China;
National Engineering Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, P. R. China;
National Engineering Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, P. R. China;
National Engineering Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, P. R. China;
National Engineering Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, P. R. China;
National Engineering Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, P. R. China;
National Engineering Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, P. R. China;
机译:c面蓝宝石衬底错切角对MOVPE生长的N极InGaN中铟含量的影响
机译:应力对在Si(111)衬底上生长的GaN / InGaN多量子阱LED性能的影响
机译:通过MOCVD生长在Si(111)衬底上的高性能InGaN LED
机译:在具有低螺纹位错密度的Si(111)衬底上生长的InGaN / GaN MQW LED的光学特性
机译:集成产品开发中的知识集成:团队愿景,相互信任和相互影响对产品开发绩效中共享知识的作用。
机译:应变松弛对在具有溅射AlN成核层的4英寸蓝宝石衬底上生长的InGaN / GaN绿色LED的性能的影响
机译:衬底错切角对AlGaN表面形貌和发光性能的影响