High-purity cobalt thin films with perpendicular magnetic anisotropy prepared by chemical vapor deposition

摘要

A study of the chemical vapor deposition (CVD) of high-purity cobalt thin films is described. The Co layer prepared by a thermal CVD technique with a Pt/Ta underlayer and a Pt cap layer shows a saturation magnetization (M_s) of ～1.8 T and perpendicular magnetic anisotropy (PMA) with an anisotropy energy (K_u) of ～10~5 J/m~3. The cobalt thickness dependence of K_u reveals that the interfacial anisotropy at the Pt/Co interface is most likely the origin of the obtained PMA.