Effects of buffered HF cleaning on metal-oxide-semiconductor interface properties of Al_2O_3/InAs/GaSb structures

摘要

We studied the impact of buffered HF (BHF) cleaning on the interface properties of Al_2O_3/InAs/GaSb metal-oxide-semiconductor (MOS) structures fabricated by the ex-situ surface cleaning process. The Al_2O_3/InAs/GaSb MOS structures fabricated with BHF cleaning exhibited lower D_(it) values than those fabricated with sulfur passivation. In addition, the Al_2O_3/InAs/GaSb MOS structures fabricated with BHF cleaning were robust with respect to the MOS field-effect transistor fabrication process by using W gate metal with PMA in the 250-300 ℃ range.