Tri-halide vapor-phase epitaxy of GaN using GaCl3 on polar, semipolar, and nonpolar substrates

摘要

Homoepitaxial tri-halide vapor-phase epitaxy (THVPE) growth on polar, semipolar, and nonpolar bulk GaN substrates was demonstrated using GaCl3 as the precursor. The influence of the surface orientation of the substrate on GaN growth by THVPE was compared with that observed for GaN grown by hydride vapor-phase epitaxy. The dependence of the GaN growth on the surface orientation of the substrate was confirmed; GaN could be grown on $(10bar{1}0)$, $(30bar{3}bar{1})$, $(20bar{2}bar{1})$, $(10bar{1}bar{1})$, and $(000bar{1})$ but not on $(0001)$, $(10bar{1}1)$, $(20bar{2}1)$, or $(30bar{3}1)$. This behavior was explained to be due to the changes in adsorption energy, the magnitudes of which were estimated by theoretical calculations. (C) 2016 The Japan Society of Applied Physics