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首页> 外文期刊>Advances in materials science and engineering >Hydrogen Charging Effects in Pd/Ti/TiO_2/Ti Thin Films Deposited on Si( 111) Studied by Ion Beam Analysis Methods
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Hydrogen Charging Effects in Pd/Ti/TiO_2/Ti Thin Films Deposited on Si( 111) Studied by Ion Beam Analysis Methods

机译:离子束分析方法研究Si(111)上沉积的Pd / Ti / TiO_2 / Ti薄膜中的氢电荷效应

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摘要

Titanium and titanium dioxide thin films were deposited onto Si( 111) substrates by magnetron sputtering from a metallic Ti target in a reactive Ar+O_2 atmosphere, the composition of which was controlled by precision gas controllers. For some samples, 1/3 of the surface was covered with palladium using molecular beam epitaxy. Chemical composition, density, and layer thickness of the layers were determined by Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS). The surface morphology was studied using high-resolution scanning electron microscopy (HRSEM). After deposition, smooth, homogenous sample surfaces were observed. Hydrogen charging for 5 hours under pressure of 1 bar and at temperature of 300℃ results in granulation of the surface. Hydrogen depth profile was determined using secondary ion mass spectrometry (SIMS) and nuclear Reaction Analysis (N-15 method), using a ~(15)N beam at and above the resonance energy of 6.417 MeV. NRA measurements proved a higher hydrogen concentration in samples with partially covered top layers, than in samples without palladium. The highest value of H concentration after charging was about 50% (in the palladium-covered part) and about 40% in titanium that was not covered by Pd. These values are in good agreement with the results of SIMS measurements.
机译:在反应性Ar + O_2气氛中,通过磁控溅射从金属Ti靶上,通过磁控溅射将钛和二氧化钛薄膜沉积到Si(111)衬底上,其成分由精密气体控制器控制。对于某些样品,使用分子束外延法将1/3的表面覆盖有钯。层的化学组成,密度和层厚度通过俄歇电子能谱(AES)和卢瑟福背散射光谱(RBS)确定。使用高分辨率扫描电子显微镜(HRSEM)研究了表面形态。沉积后,观察到光滑,均匀的样品表面。在1 bar的压力和300℃的温度下充氢5小时会导致表面造粒。使用二次离子质谱(SIMS)和核反应分析(N-15方法),使用〜(15)N束,在6.417 MeV或更高的共振能量下确定氢深度分布。 NRA测量证明,顶层覆盖部分的样品中的氢浓度比不含钯的样品中的氢浓度高。充电后的H浓度的最高值约为50%(在钯覆盖的部分),而钛中约40%的未被Pd覆盖。这些值与SIMS测量结果非常吻合。

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  • 来源
    《Advances in materials science and engineering》 |2012年第1期|p.269603.1-269603.8|共8页
  • 作者单位

    Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30 059 Krakdw, Poland,Institute of Materials Science, Technische Universitat Darmstadt, Petersenstrasse 23, 64287 Darmstadt, Germany;

    Institute of Materials Science, Technische Universitat Darmstadt, Petersenstrasse 23, 64287 Darmstadt, Germany;

    Institute of Materials Science, Technische Universitat Darmstadt, Petersenstrasse 23, 64287 Darmstadt, Germany;

    Dynamitron Tandem Labor, Ruhr-UniversitiXt Bochum, Universitatsstrasse 150, 44780 Bochum, Germany;

    Dynamitron Tandem Labor, Ruhr-UniversitiXt Bochum, Universitatsstrasse 150, 44780 Bochum, Germany;

    Institute of Physics, Pedagogical University, Podchorazych 2, 30 084 Krakdw, Poland;

    Faculty of Electrical Engineering, Automatics, Computer Science and Electronics, AGH University of Science and Technology, al. Mickiewicza 30, 30 059 Krak6w, Poland;

    Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30 059 Krakdw, Poland;

    Faculty of Electrical Engineering, Automatics, Computer Science and Electronics, AGH University of Science and Technology, al. Mickiewicza 30, 30 059 Krak6w, Poland;

    Department of Materials Science, The H. Niewodniczanski Institute of Nuclear Physics, Polish Academy of Sciences, Radzikowskiego 152, 31 342 Krakdw, Poland;

    Institute of Materials Science, Technische Universitat Darmstadt, Petersenstrasse 23, 64287 Darmstadt, Germany;

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