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首页> 外文期刊>IEEE Transactions on Advanced Packaging >Near-Field and Far-Field Analyses of Alternating Impedance Electromagnetic Bandgap (AI-EBG) Structure for Mixed-Signal Applications
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Near-Field and Far-Field Analyses of Alternating Impedance Electromagnetic Bandgap (AI-EBG) Structure for Mixed-Signal Applications

机译:混合信号应用中交替阻抗电磁带隙(AI-EBG)结构的近场和远场分析

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This paper presents near-field (NF) and far-field (FF) analysis of alternating impedance electromagnetic bandgap (AI-EBG) structure in packages and boards. Three test vehicles have been designed and fabricated for NF and FF measurements. Simulation results using a full-wave solver (SONNET) have been compared with measurement results. This paper investigates the radiation due to return current on different reference planes. The analysis results from simulations and measurements provide important guidelines for design of the AI-EBG structure based power distribution network for noise isolation and suppression in mixed-signal systems
机译:本文介绍了封装和电路板中交替阻抗电磁带隙(AI-EBG)结构的近场(NF)和远场(FF)分析。已经设计和制造了三种用于NF和FF测量的测试工具。使用全波求解器(SONNET)的仿真结果已与测量结果进行了比较。本文研究了由于不同参考平面上的返回电流引起的辐射。仿真和测量的分析结果为基于AI-EBG结构的配电网络的设计提供了重要指导,可用于混合信号系统中的噪声隔离和抑制

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