Manipulating Photoluminescence of Carbon G-center in Silicon Metasurface with Optical Bound States in the Continuum

摘要

In this paper, a dielectric metasurface is demonstrated to manipulate the photoluminescence of the G-centers introduced by nanopatterning of crystalline silicon. The metasurface consists of asymmetric holes arranged in a square array, which can transform the bound states in the continuum (BICs) with infinite quality factor to a quasi-BICs, while maintaining high quality factor of the optical resonance. Compared with the photoluminescence of G-centers with nonresonance enhancement, approximate to 40 times photoluminescence enhancement is achieved, accompanied by a near-zero threshold at cryogenic temperature. In addition, the polarization of the photoluminescence is controlled by the structural asymmetry. These findings provide a novel approach to enhance and manipulate the photoluminescence of G-centers and may anticipate for realizing light source in silicon.