Interface-Induced High Responsivity in Hybrid Graphene/GaAs Photodetector

摘要

Photodetectors based on two-dimensional (2D)/ three-dimensional (3D) semiconductor heterojunction structures are emerging as appealing candidates for high-sensitivity applications. The performances of these hybrid photodetectors are closely correlated with their current gain mechanism. Carrier recirculation is the most commonly reported mechanism. Recently, a Fermi level alignment mechanism was proposed for 2D graphene/0-dimensional (0D) quantum dot heterostructures because of the easy Fermi level tunability of the quantum dot. In this article, an interface-induced gain mechanism using this Fermi level alignment process is proposed and identified based on a 2D graphene/3D GaAs hybrid structure with comparative measurement configurations. Because of the high surface state density of GaAs, the photo-excited holes tend to become trapped at the graphene/GaAs interface, which can easily lower the interface Fermi level and the Fermi level in graphene via an alignment process. When combined with the high carrier mobility characteristics of graphene, a maximum current gain of 2520 and responsivity of 1321 A W-1 are achieved in the devices. This study clarifies the role of the interface states in the gain characteristics of some 2D/3D hybrid devices, with results that are instructive for optimal device design.