High-Efficiency Formamidinium Lead Bromide Perovskite Nanocrystal-Based Light-Emitting Diodes Fabricated via a Surface Defect Self-Passivation Strategy

摘要

Formamidinium lead bromide (FAPbBr(3)) nanocrystals (NCs) demonstrate great potential in light-emitting diode (LED) applications due to their pure green emission and excellent stability. However, the abundant defects at the surface of the NCs act as charge trapping centers and significantly increase the trap-assisted nonradiative recombination channels, hampering the performance improvement of LEDs based on FAPbBr(3) NCs. Herein, a facile self-passivation strategy of the surface defects is developed by introducing excess formamidinium bromide (FABr) during the colloidal synthesis of NCs, leading to much improved photoluminescence quantum yield (PLQY) of the obtained NCs. In addition, enhanced charge transport property is measured in the assembled films owing to the simultaneously declined insulating ligands at the surface of NCs. The molar ratio of FABr and PbBr2 is rationally optimized during the synthesis of NCs and high-efficient green-emissive LEDs are fabricated with a champion current efficiency of 76.8 cd A(-1), corresponding to an external quantum efficiency of 17.1%, which is among the best-performing green LEDs based on perovskite NCs so far.