Fabrication of Large-Area Silicon Nanowire p-n Junction Diode Arrays

摘要

Over the past years, one-dimensional nanoscale wires and tubes have attracted considerable attention clue to their novel electronic and optical properties. Semiconductor nanowires are nanoscale building blocks that could, through bottom-up assembly, enable diverse applications in nanoscale electronics and photonics. Individual, homogeneous semiconducting nanowires have been previously used as field-effect transistors, photodetectors, and bio/chemical sensors, while more sophisticated light-emitting diode and complementary logic devices have also been realized by assembling both n- and p-type semiconducting nanowires into crossed junctions.