机译:交叉替代在2D半导体中促进超宽度的带隙高达4.5eV:硫磷酸镓
Henan Normal Univ Sch Phys Henan Key Lab Photovolta Mat Xinxiang 453007 Henan Peoples R China;
Chinese Acad Sci State Key Lab Superlattices & Microstruct Inst Semicond Beijing 100083 Peoples R China|Univ Chinese Acad Sci Ctr Mat Sci & Optoelect Engn Beijing 100083 Peoples R China;
Chinese Acad Sci State Key Lab Superlattices & Microstruct Inst Semicond Beijing 100083 Peoples R China|Univ Chinese Acad Sci Ctr Mat Sci & Optoelect Engn Beijing 100083 Peoples R China;
Henan Normal Univ Sch Phys Henan Key Lab Photovolta Mat Xinxiang 453007 Henan Peoples R China;
Chinese Acad Sci State Key Lab Superlattices & Microstruct Inst Semicond Beijing 100083 Peoples R China|Univ Chinese Acad Sci Ctr Mat Sci & Optoelect Engn Beijing 100083 Peoples R China;
2D ultrawide bandgap semiconductors; GaPS; (4); in#8208; plane anisotropy; solar#8208; blind photodetection;
机译:具有超视图带隙的半导体上宽时域的表面光伏光谱:氧化镓的示例
机译:Ultrawide Bandgap半导体
机译:通过第一原理计算Ultrawide Bandgap Perovskite半导体的电子和光学特性
机译:通过12 V至48 V氮化镓DC / DC转换器中的频谱控制来提高宽带隙半导体的允许开关速率
机译:宽带隙半导体的光学研究:金刚石,氮化镓和氮化硼
机译:基于超宽带隙Ga2O3半导体的肖特基势垒二极管的概述用于电力电子应用
机译:宽带隙和超空手隙半导体的等离子体蚀刻
机译:Ultrawide-Bandgap semiconductors:研究机遇与挑战。