Ultrawide bandgap semiconductors

摘要

Ultrawide bandgap (UWBG) semiconductors,with energy bandgaps (>4eV),much wider than the conventional wide bandgap (WBG) of GaN (3.4 eV) and SiC (3.2 eV),represent an emerging new area of research covering a wide spectrum from materials,physics,devices,and applications. This new class of semiconductors has promising applications for future generations of RF and high-power electronics,as well as deep-UV optoelectronics,quantum electronics,and harsh-environment applications. Compared to the development of traditional semiconductors such as Si and the Ⅲ-Vs,and even the WBGs,all UWBG materials are relatively immature and still at a nascent stage. This Special Topic covers broad research subtopics on UWBG bulk crystals and substrate technologies,UWBG electronic and optoelectronic properties,UWBG power electronic devices,UWBG defect science and doping,UWBG low-dimensional structures and devices,UWBG carrier recombination dynamics,UWBG gate and passivation dielectrics,UWBG thermal properties and thermal engineering,and UV light emitting diodes and detectors.