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首页> 外文期刊>Advanced Materials >A Facile, Low-cost, And Scalable Method Of Selective Etching Of Semiconducting Single-walled Carbon Nanotubes By A Gas Reaction
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A Facile, Low-cost, And Scalable Method Of Selective Etching Of Semiconducting Single-walled Carbon Nanotubes By A Gas Reaction

机译:一种通过气体反应选择性刻蚀半导体单壁碳纳米管的简便,低成本,可扩展方法

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摘要

Single-walled carbon nanotubes (SWNTs) are one of the most promising materials for future electronics. However, they are generally grown as a mixture of metallic and semiconducting tubes, which is a major obstacle to their widespread application. Recently, several approaches for the enrichment of SWNTs with one electronic type have been developed, such as selective elimination of metallic SWNTs (M-SWNTs) by electrical breakdown or methane plasma etching, selective adsorption, electrophoresis, and density-gradient centrifugation. In these reported methods, however, either the amount of the separated samples is quite small, or long-time or ultrahigh-speed centrifugation are needed in order to achieve good results.
机译:单壁碳纳米管(SWNT)是未来电子产品最有前途的材料之一。但是,它们通常以金属管和半导体管的混合物形式生长,这是对其广泛应用的主要障碍。近来,已经开发了几种富集一种电子类型的单壁碳纳米管的方法,例如通过电击穿或甲烷等离子体蚀刻选择性去除金属单壁碳纳米管(M-SWNT),选择性吸附,电泳和密度梯度离心。但是,在这些报告的方法中,分离的样品数量很少,或者需要长时间或超高速离心才能获得良好的结果。

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