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首页> 外文期刊>Advanced Materials >Controllable Magnetic Proximity Effect and Charge Transfer in 2D Semiconductor and Double-Layered Perovskite Manganese Oxide van der Waals Heterostructure
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Controllable Magnetic Proximity Effect and Charge Transfer in 2D Semiconductor and Double-Layered Perovskite Manganese Oxide van der Waals Heterostructure

机译:2D半导体中可控磁性接近效应和电荷转移和双层钙钛矿锰氧化物van der waals异质结构

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摘要

Optically generated excitonic states (excitons and trions) in transition metal dichalcogenides are highly sensitive to the electronic and magnetic properties of the materials underneath. Modulation and control of the excitonic states in a novel van der Waals (vdW) heterostructure of monolayer MoSe2 on double-layered perovskite Mn oxide ((La0.8Nd0.2)(1.2)Sr1.8Mn2O7) is demonstrated, wherein the Mn oxide transforms from a paramagnetic insulator to a ferromagnetic metal. A discontinuous change in the exciton photoluminescence intensity via dielectric screening is observed. Further, a relatively high trion intensity is discovered due to the charge transfer from metallic Mn oxide under the Curie temperature. Moreover, the vdW heterostructures with an ultrathin h-BN spacer layer demonstrate enhanced valley splitting and polarization of excitonic states due to the proximity effect of the ferromagnetic spins of Mn oxide. The controllable h-BN thickness in vdW heterostructures reveals a several-nanometer-long scale of charge transfer as well as a magnetic proximity effect. The vdW heterostructure allows modulation and control of the excitonic states via dielectric screening, charge carriers, and magnetic spins.
机译:在过渡金属二甲甲基化物中的光学产生的激子状态(激子和枝)对下面材料的电子和磁性高度敏感。在对双层钙钛矿Mn氧化物((La0.8ND0.2)((1.2)SR1.8MN2O7)进行单层MOSE2的新型van DAR WAALS(VDW)异质结构的调节和控制,其中Mn氧化物转化从顺磁绝缘体到铁磁金属。观察到通过电介质筛选的激子光致发光强度的不连续变化。此外,由于居里温度下的金属Mn氧化物的电荷转移,发现了相对高的小型强度。此外,由于Mn氧化物的铁磁性旋转的接近效应,具有超薄H-BN间隔层的VDW异质结构表明了由于Mn氧化物铁磁性旋转的邻近效应而增强的谷位分裂和激子状态的偏振。 VDW异质结构中的可控H-BN厚度揭示了几纳米长的电荷转移量表以及磁性接近效果。 VDW异质结构允许通过电介质筛选,电荷载体和磁性旋转来调制和控制激子状态。

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