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首页> 外文期刊>Advanced Materials >Controlled Growth of Large-Area High-Performance Small-Molecule Organic Single-Crystalline Transistors by Slot-Die Coating Using A Mixed Solvent System
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Controlled Growth of Large-Area High-Performance Small-Molecule Organic Single-Crystalline Transistors by Slot-Die Coating Using A Mixed Solvent System

机译:混合溶剂系统通过缝模涂布控制大面积高性能小分子有机单晶晶体管的生长

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摘要

The rapid development of organic material design and device processing has led to great progress for solution-processed organic field-effect transistors (OFETs). Although conventional vapor-deposited devices have higher performance than their solution-processed counterparts, low-cost large-area solution-processed high-performance devices still remain a challenge. Conventional solution-processed thin-film transistors fabricated by spin-coating or drop-casting methods cannot control the crystal growth behavior and crystal orientation to achieve high performance and large-area production. The control of crystal orientation and growth direction in channel regions has posed significant technical challenges. Therefore, many deposition techniques have been used for patterning and alignment of organic semiconductors. Among them, friction-transfer, rubbing alignment, photoalignment, magnetic alignment, Langmuir-Blodgett (LB), zone-casting, and solution-shearing techniques, etc., are promising to produce highly aligned thin films. However, most of these techniques are not suitable for convenient, large-area commercial production. Based on this consideration, a new deposition technique is still desirable for realizing industrial applications like roll-to-roll printing.
机译:有机材料设计和器件处理的飞速发展已经为溶液处理的有机场效应晶体管(OFET)带来了巨大的进步。尽管常规的气相沉积器件比其溶液处理的同类器件具有更高的性能,但是低成本大面积溶液处理的高性能器件仍然是一个挑战。通过旋涂或滴铸法制造的常规溶液处理的薄膜晶体管不能控制晶体生长行为和晶体取向以实现高性能和大面积生产。沟道区域中晶体取向和生长方向的控制提出了重大的技术挑战。因此,许多沉积技术已经用于有机半导体的图案化和对准。其中,摩擦传递,摩擦取向,光取向,磁取向,Langmuir-Blodgett(LB),区域流延和溶液剪切技术等,有望产生高度取向的薄膜。但是,这些技术中的大多数都不适合于方便的大面积商业生产。基于此考虑,对于实现诸如卷对卷印刷之类的工业应用,仍需要一种新的沉积技术。

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  • 来源
    《Advanced Materials》 |2013年第44期|6442-6447|共6页
  • 作者单位

    Department of Chemistry National University of Singapore 3 Science Drive 3, 117543, Singapore;

    Department of Chemistry National University of Singapore 3 Science Drive 3, 117543, Singapore;

    Institute of Materials Research and Engineering A*Star, 3 Research Link, 117602, Singapore;

    Department of Chemistry National University of Singapore 3 Science Drive 3, 117543, Singapore,Institute of Materials Research and Engineering A*Star, 3 Research Link, 117602, Singapore;

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