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Chasing the 'Killer' Phonon Mode for the Rational Design of Low-Disorder, High-Mobility Molecular Semiconductors

机译:追求“杀手”声子模式以实现低序,高迁移率分子半导体的合理设计

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摘要

Molecular vibrations play a critical role in the charge transport properties of weakly van der Waals bonded organic semiconductors. To understand which specific phonon modes contribute most strongly to the electron-phonon coupling and ensuing thermal energetic disorder in some of the most widely studied high-mobility molecular semiconductors, state-of-the-art quantum mechanical simulations of the vibrational modes and the ensuing electron-phonon coupling constants are combined with experimental measurements of the low-frequency vibrations using inelastic neutron scattering and terahertz time-domain spectroscopy. In this way, the long-axis sliding motion is identified as a "killer" phonon mode, which in some molecules contributes more than 80% to the total thermal disorder. Based on this insight, a way to rationalize mobility trends between different materials and derive important molecular design guidelines for new high-mobility molecular semiconductors is suggested.
机译:分子振动在弱范德华键合有机半导体的电荷传输特性中起着至关重要的作用。要了解在某些最广泛研究的高迁移率分子半导体中,哪种特定的声子模式对电子-声子耦合和随之而来的热能紊乱起最重要的作用,我们将对振动模式进行最新的量子力学模拟,并由此电子-声子耦合常数与使用非弹性中子散射和太赫兹时域光谱法对低频振动的实验测量相结合。以此方式,长轴滑动运动被识别为“杀手”声子模式,在某些分子中,该声子模式对总热失调的贡献超过80%。基于此见解,提出了一种合理化不同材料之间迁移率趋势并得出重要的新高迁移率分子半导体分子设计指南的方法。

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